Simulation of Semiconductor Devices
KTH Royal Institute of TechnologyStockholm, Sweden
Fee for international students
- Intakes
- Not published
- Duration
- 0.3 years
Programme facts
- Level
- Master's
- Duration
- 0.3 years
- Language of teaching
- English
- Study mode
- part time
- Credits
- 8 ECTS
- Intakes
- Not published
About this programme
The course gives an in-depth knowledge in simulation of advanced semiconductor devices for all application areas with a focus on CMOS. Other topics include power devices, solar cells and emerging technologies such as spintronics. This course is based on learning by doing, which means that you learn by using state of the art tools such as Comsol Multiphysics and cloud based tools such as nanoHUB . We also cover SPICE simulations topics such as the BSIM compact model family for circuit simulations. We explain the solution the semiconductor equations using numerical methods. In connection to this topic, we introduce the finite element method ( FEM ) in relevant contexts. This course is a good introduction to a master's thesis in the semiconductor device field. Several thesis projects are offered each academic year. Choose semester and course offering to see current information and more about the course, such as course syllabus, study period, and application information. Please note: all information from the Course syllabus is available on this page in an accessible format. The course covers modelling of semiconductors and nanostructures with numerical methods such as the finite difference method (FDM) and the finite element method (FEM) and industry standard simulation programs for circuit design. The focus is on modern CMOS technology nodes including FinFET, SOI and future generations of 3D devices. Power consumption, energy efficiency and sustainable energy production are recurring themes.
Entry requirements
This university does not publish entry requirements in our data. A counsellor can confirm them for you.
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